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Session Description
Note that this session will now take place in Lecture Theatre B Chair: Hideo Hosono INVITED | Martin Kuball: Next Generation High Voltage Electronics: Potentials and Challenges of Gallium Oxide Christopher Dawe: Deep level traps in epilayers of (010) β-Ga2O3 grown by metal organic chemical vapour deposition on Sn-doped β-Ga2O3 substrates Lijie Sun: Deep level defects in dilute AlxGa1-xN alloy Harold Dekkers: Controlling hydrogen induced n-type doping in InGaZnO4 films
Session Date
07 August 2024
Session Time
14:00 - 15:30
Room
Lecture Theatre B
14:00 - 14:30
Next Generation High Voltage Electronics: Potentials and Challenges of Gallium Oxide
Martin Kuball
ID: 27606
14:30 - 14:50
Deep level traps in epilayers of (010) β-Ga2O3 grown by metal organic chemical vapour deposition on Sn-doped β-Ga2O3 substrates
Chris Dawe
ID: 75151
14:50 - 15:10
Deep level defects in dilute AlxGa1-xN alloy
Lijie Sun
ID: 77278
15:10 - 15:30
Controlling hydrogen induced n-type doping in InGaZnO4 films
Harold Dekkers
ID: 38712
The exciting conference programme is co-convened with the following partners:
ICANS30 is proudly sponsored by: