General
Programme
Travel & Accommodation
Registration
Conference Information
Session Description
Chair: Pietro Pampili INVITED | David Wallis: Growth and Characterisation of large area cubic-GaN for LEDs David Binks: Saturation of localisation centres and efficiency droop in InGaN/GaN quantum wells Dongwon Kang: Highly Stable Rad-Hard Metal Oxide Thin-Film Transistors for X-ray Image Sensing Applications John Robertson: TeO2 as a p-type amorphous semiconductor for low-temperature processing
Session Date
06 August 2024
Session Time
14:00 - 15:30
Room
Lecture Theatre A
14:00 - 14:30
Growth and Characterisation of large area cubic-GaN for LEDs
David Wallis
ID: 16187
14:30 - 14:50
Saturation of localisation centres and efficiency droop in InGaN/GaN quantum wells
David Binks
ID: 93430
14:50 - 15:10
Highly Stable Rad-Hard Metal Oxide Thin-Film Transistors for X-ray Image Sensing Applications
dongwon kang
ID: 45620
15:10 - 15:30
TeO2 as a p-type amorphous semiconductor for low-temperature processing
John Robertson
ID: 12423
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