Ge-rich GST (GGST) alloys are the most promising materials for phase-change memory (PCM) in embedded applications, being able to fulfill the soldering profile and the tough retention requirements of consumer and automotive markets. Significant efforts have been thus put to engineer those materials and optimize their integration. In this perspective, the physical characterization of device and material properties is instrumental to understand the underlying physics and optimize the interactions between cell functionality and integration. In particular, GGST crystallization and segregation mechanisms are crucial for functioning and tuning of the electrical performances of the memory cell. Segregation thermodynamic and kinetic are the core of the working principle of Ge-rich ePCM, giving it the capability to satisfy high temperature data retention specifications without disruptive impact on programming speed and reading window. In this talk, an overview of possible path to manufacturing for advanced logic and smart power applications will be presented. Typical process-induced segregation will be introduced, showing its effects on the cell electrical performances and reliability, and how to exploit it to meet the challenges of embedded technologies.