Silicon-based light-emitting devices (LED) with rare earth Er³⁺ ions doped semiconductor films are considered to have promising applications in the field of optoelectronic integration [1,2]. The Er³⁺ ions transition produces near-infrared (NIR) luminescence with a wavelength of 1550 nm, which exactly corresponds to the minimum loss window range of silica optical waveguides. Therefore, it is very important to study efficient Er³⁺ ions doped NIR electroluminescent devices. In our previous work, we found that co-doping SnO₂ nanocrystals (NCs) and utilizing the energy transfer between SnO₂ NCs and Er³⁺ ions can effectively sensitize the luminescence of Er³⁺ ions. In order to further increase the luminescence intensity of Er³⁺ ions, we established a new energy transfer channel to Er³⁺ ions by introducing Yb³⁺ ions, which greatly increased the NIR luminescence intensity of Er³⁺ ions. Although the NIR luminescence of Er³⁺ ions can be enhanced by introducing wide-bandgap SnO₂ NCs and rare earth Yb³⁺ ions, the concentration quenching effect of rare earth ions and the electrical insulation properties of the silica matrix limit the realization of efficient EL devices. In the present work, we further optimized the film fabrication conditions to achieve efficient EL devices. We reduce the thickness of the silica film by controlling the spin coating speed, which is beneficial to inject carriers into the emissive layer and reduce the threshold voltage of the device. By adjusting the appropriate doping concentration of rare earth elements, we further enhanced the NIR EL performance of LED based on SiO₂-SnO₂:Er³⁺/Yb³⁺ films. Meanwhile, the NIR EL intensity of the device hardly decays after 180 minutes of continuous operation, exhibiting better device stability. This work was supported by the National Natural Science Foundation of China (61921005).