Hyderdoping allows us to move semiconductors from their ground state to one with varying material and electronic properties by the addition of dopants. Exact control over species, location and depth are key in the utilisation of hyperdoping but also in the understanding of its effects. 

Here we demonstrate the hyderdoping, using secondary electron microscopy to initial locate device architecture and then a focused ion beam for ion implantation. This moves to localised nanoscale modification, allowing for multiple experiments to be performed on chip and the localised effects of hyperdoping to be explored. The use of a focused ion beam gives us a range of implantation doses, those for hyperdoping range from 10¹⁵ to 10¹⁹ ions cm^-2. The formation of the focused ion beam is through the use of a liquid metal alloy ion source, with subsequent mass filtering of the beam via a Wien filter. This allows for species to be selected and implanted. Isolation has been demonstrated for multiple species including Au, Co, Ge, Er, Sb, Sn, In, B, Si, Cu and Nd.

Once hyperdopped, additional annealing moves some of these systems to form nanoparticles in localised areas. The regime for Au into Si is heavily dictated by dopped dose, ramp rate to temperature and final temperature. Here we demonstrate the formation of three phases through the use of varying heater temperature and observing the phase growth. Demonstration of small <3 cluster of nanoparticles have also been demonstrated with sub micro precision. Such nanoparticle growth has wide ranging applications from photonics to catalysis. [mc1] 

With the localised nature of the implantation we hope to change the way nanoscale modifications and hyperdoping can be applied to current device architectures.