In this study, we effectively utilized the physical vapor deposition approach to fabricate a magnetic-topological (Ni₈₀Fe₂₀/p-TlBiSe₂/p-Si) heterostructure. From x-ray diffraction analysis it is clear that the structural analysis outcomes are in agreement with the previously reported results[1]. The Raman analysis was performed to examine the phonon vibration and the results shows that Raman forbidden mode appears, indicating a violation of time reversal symmetry[2]. The electrical properties of heterojunction were examined in both dark and light environments under the absence and presence of a magnetic field. The results of the investigated device (Ni₈₀Fe₂₀/p-TlBiSe₂/p-Si) shows outstanding photo responsivity in forward and reverse bias zones. Interestingly, under the application of 800 Oe external magnetic field, the device's electrical conductivity decreases from 9.5µA to 8.2µA at +1V of external biasing. The possible reasons to occur such effect is that  under application of external magnetic field the resistance of the p-n junction diode increases due to magnetoresistence effect and the Lorentz force in a magnetic field influences the movement direction of space charge carriers. This results in a modification of the space charge shape and an increase in the potential barrier[3]. Along with this magnetic field also affect the diffusion length leading to reduction in current[4]. Further, the photo response has also been assessed by the transient absorption spectroscopy through analysis of charge transfer and carrier relaxation mechanisms which revels that the under the application of external magnetic field the time reversal symmetry of topological material gets break down leading to opening of band gap at the Dirac point. Finally, in this work we discuss Topological magnetic heterostructure based spintronics applications, focusing on the possibility of operating at room temperature. Our results can be beneficial for quantum computation and further study of topological insulator/ferromagnet heterostructure and topological material based spintronic devices due to high spin orbit coupling along with dissipation-less conduction channels at the surface states.
 References:
[1]      A. Devonport, A. Vishina, R.K. Singh, M. Edwards, K. Zheng, J. Domenico, N.D. Rizzo, C. Kopas, M. van Schilfgaarde, N. Newman, Magnetic properties of chromium-doped Ni80Fe20 thin films, Journal of Magnetism and Magnetic Materials. 460 (2018) 193–202. https://doi.org/10.1016/j.jmmm.2018.03.054.
[2]      L. Du, T. Hasan, A. Castellanos-Gomez, G.-B. Liu, Y. Yao, C.N. Lau, Z. Sun, Engineering symmetry breaking in 2D layered materials, Nature Reviews Physics. 3 (2021) 193–206. https://doi.org/10.1038/s42254-020-00276-0.
[3]      D.A. KARA, O. KIYIKCI, G. OYLUMLUOĞLU, EFFECT OF MAGNETIC FIELD ON GERMANIUM P-N HOMOJUNCTION, Mugla Journal of Science and Technology. 7 (2021) 1–5. https://doi.org/10.22531/muglajsci.987733.
[4]      W. Hudson, E. Meyn, C. Schultz, Transistor performance in intense magnetic fields, IEEE Transactions on Magnetics. 6 (1970) 704–704. https://doi.org/10.1109/TMAG.1970.1066965.