Abstract Details


Abidur Rahaman

Associate Professor at Noakhali Science and Technology University

Abidur Rahaman

Associate Professor at Noakhali Science and Technology University

Abstract Name:

Analog Output Buffer using Dual Gate Coplanar a-IGZO TFTs for Integrated Display Data Drivers

Symposium:

Symposium C: Electronic & Photonic Devices

Topic:

C4: Thin Film Transistor Technologies

Abstract Contributing Authors:

Abidur Rahaman1,2, Sunaina Priyadarshi1, Sabiqun Nahar1 and Jin Jang1

Abstract Body:

Among the amorphous oxide semiconductors (AOS), indium–gallium–zinc oxide (IGZO) TFT technology is the most popular currently for display applications . Output buffers are an important part of analog circuit design. In-display panel, it is integrated with the outputs of both the gate driver and data driver. In particular, for the column driver, outputs of the digital to analog converter (DAC) are buffed by the implementation of the source follower. It directly connects the source line of the pixel circuits and ensures appropriate pixel brightness. Here, We have fabricated the analog output bufer (AOB) made of coplanar single gate (SG) and dual-gate (DG) oxide TFTs . Previously, DG design proves its superiority by DG induced mid-channel bulk accumulation, a high drain current , stability improvement against NBIS (negative bias illumination stress), that boosts the speed of the circuit in inverters, ring oscillator, current mirror and operational amplifiers . There are some reports regarding analog buffer  made of LTPS TFTs. There is no oxide TFT based complete study report. We assume this can be due to the lower gain of the oxide circuits (e.g. lower current and mobility). The threshold voltage (Vth), maximum field-effect mobility (µfe-Max), and subthreshold swing (SS) for DG and SG TFT by measurement is 0.1 V, -1.8 V, 18.4 cm2/V.s, 13.52 cm2/V.s, 0.35 V/dec. , and 0.85 V/dec.  respectively. The DG TFTs output drain current accounts 2.4 times than the SG one. A 3-TFT based 4-terminal circuit which is a source-follower type with an embedded current mirror. Note the DG topology with a shorter channel length of 2 μm. The circuit response improves significantly with the DG design. The output offset error stays below  2V when the applied input varies between 0-15V. We applied a 10 V p-p, 20 kHz square wave pulse to the input . The DG AOB response reaches to of 8.1 V while SG AOB only reaches to 4 V . Further, we have checked frequency stability. DG AOB shows a stable response in the (1- 50) kHz range. While the SG AOBs frequency response is poor and deteriorates as frequency goes to higher. The DG TFT based AOB outclass the SG counterpart in all aspects. To the best of our knowledge, this is the first DG a-IGZO TFT based AOB study. Thus, DG analog output bufer can be integrated into all oxide-based complete data drivers for display applications.

Attached Figure:

FIGURES (1-5).pdf

Submission Type:

Talk

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