Hexagonal boron nitride (hBN), as an excellent encapsulant and gate dielectric 2D material, is significant to explore the use for polarized photonics functionalities and potential applications. Optically active defects in h-BN are intriguing, serving not only to enable the optical readout of spins but also to function as quantum emitters that operate at room temperature [2]. Furthermore, the creation of defects in hBN disrupts the symmetry of the lattice and induces an in-plane anisotropic crystal structure [3]. Here, we uncovered an intriguing in-plane anisotropic Raman response and photoluminescence phenomenon in 2D hBN subjected to ion irradiation. Leveraging this discovery, we seamlessly integrated the ion-irradiated hBN into room-temperature p-i-n Si detectors, fabricated on a CMOS line. Notably, the ion-irradiated hBN will serve as the polarized-sensitive layer, while Te hyperdoped silicon (Te–Si) will facilitate infrared absorption. This innovative hybrid structure, combining ion-irradiated hBN and silicon, represents a breakthrough in detector technology, showcasing its potential as a polarized-sensitive photodetector. Specifically tailored for near-infrared (NIR) polarized image sensing, the detector exhibits compatibility with the CMOS process. Our novel approach opens avenues for the development of polarized optoelectronic devices boasting enhanced performance and expanded functionality.

[1] Tyo. J. Scott et al Appl. Opt. 2006, 45 (22) 5453-5469.

[2] Wei Liu et al Mater. Quantum. Technol. 2022, 2, 032002.

[3] Mehdi Abdi et al ACS Photonics 2018, 5, 1967-1976.