Abstract Details

Abstract Name:

Epitaxy of hexagonal GaAs/SiGe core/multi-shell nanowires

Symposium:

Symposium B: Materials Discovery, Modification & Functionalisation

Topic:

B1: Nanoscale Semiconductors

Abstract Contributing Authors:

M.M. Jansen,a W.H.J. Peeters,a M.A.J. van Tilburg,a V.T. van Lange,a R. Farina,a M.F. Schouten,a C. Wakelkamp,a M.A. Verheijen,a,b J.E.M. Haverkort,a L. Vincent,c and E.P.A.M. Bakkersa a Department of Applied Physics, Eindhoven University of Technology, Groene Loper 19, 5612AP Eindhoven, The Netherland b Eurofins Materials Science BV, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands c Centre de Nanosciences et de Nanotechnologies, Universite Paris-Saclay, Palaiseau 91120, France

Abstract Body:

Attached Figure:

JANSEN_marvinmarco_ICANS30.pdf

Submission Type:

Talk