Abstract Details


Shengqiang Zhou

Department head "Semiconductor Materials" at Helmholtz-Zentrum Dresden-Rossendorf

Shengqiang Zhou

Department head "Semiconductor Materials" at Helmholtz-Zentrum Dresden-Rossendorf

Abstract Name:

Scalability of negatively charged boron vacancies in bulk hexagonal boron nitride

Symposium:

Symposium C: Electronic & Photonic Devices

Topic:

C3: Single Photon Sources

Abstract Contributing Authors:

Shuyu Wen (1,2), Peiting Wen (1,3), Slawomir Prucnal (1), Manfred Helm (1,3), Shengqiang Zhou (1), and Yonder Berencén (1) 1 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany 2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 Technische Universität Dresden, 01062 Dresden, Germany

Abstract Body:

Color centers in hexagonal boron nitride (hBN) have recently garnered significant interest in the field of quantum magnetometry due to their unique properties. With a spin S=1, negatively charged boron vacancies (VB-) in hBN can serve as a quantum sensor and provide a spin-photon interface. In this work, we harnessed the scalability and versatility of bulk hBN samples, a characteristic not feasible with 2D hBN, to irradiate them with a He+ beam. Irradiated hBN powder presents stable room-temperature photoluminescence and optically-detected magnetic resonance. Leveraging this scalability, we present a cost-effective solution for advancing magnetic field quantum sensing, enabling the use of economical avalanche photodiodes alongside traditional lock-in amplifier systems on the hBN platform. 

Submission Type:

Poster

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