General
Programme
Travel & Accommodation
Registration
Conference Information
Abstract Details
Shengqiang Zhou
Department head "Semiconductor Materials" at Helmholtz-Zentrum Dresden-Rossendorf
Abstract Name:
Scalability of negatively charged boron vacancies in bulk hexagonal boron nitride
Symposium:
Symposium C: Electronic & Photonic Devices
Topic:
C3: Single Photon Sources
Abstract Contributing Authors:
Shuyu Wen (1,2), Peiting Wen (1,3), Slawomir Prucnal (1), Manfred Helm (1,3), Shengqiang Zhou (1), and Yonder Berencén (1) 1 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany 2 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 Technische Universität Dresden, 01062 Dresden, Germany
Abstract Body:
Submission Type:
Poster
The exciting conference programme is co-convened with the following partners:
ICANS30 is proudly sponsored by: