To overcome the limitation of low luminescence efficiency in silicon and achieve Si-based monolithic optoelectronic integrations, an effective way is to combine luminescent halide perovskite materials with silicon to prepare efficient perovskite/Silicon heterojunction light-emitting devices (Si-based PeLEDs) which have shown the good performance in our previous work [1-2]. Currently, one of challenges, in viewpoint of actual application, is to modulate the emission wavelength to the near infrared (NIR) region (say 1.55μm) to meet the requirement for low-loss optical communication. In this study, by introducing rare-earth Er³⁺ ions into the double perovskite Cs₂NaSbCl₆, the 1.55 μm photoluminescence has been observed. This emission peak corresponds to the energy level transition of Er³⁺ from ⁴I_13/2 to ⁴I_15/2. The influences of composition of perovskite Cs₂NaSbCl₆ on the emission behaviors were investigated to understand the luminescence process. Furthermore, Si-based PeLEDs were prepared by using double perovskite nanocrystals and the NIR electroluminescence emission were successfully detected at a driving voltage of 15V. Due to the better thermal conductivity of Si, the device can be well operated even under the high driving voltages. The work is supported by NSFC (No. 61921005) and National Key R&D Program of China (2018YFB2200101).