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Abstract Details
William Fieldhouse-Allen
PhD student at University of Manchester
Abstract Name:
Temperature and excitation dependence of recombination efficiency in cubic InGaN/GaN Quantum Wells
Symposium:
Symposium B: Materials Discovery, Modification & Functionalisation
Topic:
B3: Wide Bandgap Materials
Talk
• Temperature and excitation dependence of recombination efficiency in cubic InGaN/GaN Quantum Wells
Abstract Contributing Authors:
W. R. Fieldhouse-Allen, R. Barrett, M. J. Kappers, M. Frentrup, D. J. Wallis2, R. A. Oliver and D. J. Binks
Abstract Body:
Attached Figure:
Supplementary figure ICANS.pdf
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