The pursuit of sustainable energy solutions has stimulated extensive research into thermal energy harvesting. The abstract provides a comprehensive overview of fabricating Q-Dot Glass/2D heterostructures that could be integrated onto SOI substrates tailored for thermal energy harvesting applications. A three-layered heterostructure was synthesized via pulsed laser deposition technique. Initially, a thick layer of Bi₂S₃ Q-Dot silicate glass (a few mm) was deposited on a silicon substrate, serving as a heat sink for the thermal harvesting device. The Bi₂S₃ Q-Dot silicate glass system was synthesized using the high-temperature melt-quench technique (1250°C). Subsequently, a few nm thick layer of MoS₂ was integrated with the Q-Dot glass layer, while a few nm thick layer of graphene was sandwiched between the Q-Dot glass layer and the MoS₂ layer, facilitating efficient thermal energy conversion. Charge carriers generated in the MoS₂ layer due to heat can be collected for further power generation. The presence of A_1g and E_2g bands at ~406 nm and ~380 nm, respectively, in Raman spectroscopy, along with clear D and G bands of graphene, indicates successful integration. Further cross-sectional TEM imaging reveals smooth integration of 2D materials onto the Q-Dot glass system. These heterostructures hold promise for realizing next-generation energy harvesting devices, representing a significant advancement in the field of thermal energy harvesting with tailored solutions offering enhanced efficiency and scalability. This initiative holds immense potential to revolutionize the way we approach energy utilization in the ICT sector leading to meaningful progress towards sustainable and efficient technology solutions that will benefit not only different industries but also our planet.