InAs_xP_1-x semiconductor alloys offer a wide tunability of g-factor ranging from 1.2 for InP (x= 0.0) to -14.75 for InAs (x= 1.0) including a possible zero g-factor. In this work, we studied the magneto-optical properties of InAs_xP_{1− x} films at room temperature and focused on two alloy compositions (x= 0.07 and 0.34). When it comes to photodetectors for quantum information and sensing, to preserve the entanglement it is important to fabricate devices using a material system that has a conduction band effective g-factor much smaller than the valence band so that the photodetector can excite equally to the spin split states. This talk presents new experimental and theoretical results highlighting that a g-factor close to zero can be achieved in InAs_xP_{1− x} with the right alloy concentration (x~ 0.34). This fact introduces the prospects of this materials system regarding quantum communication devices.